Semiconductor device, manufacturing method thereof and aggregate type semiconductor device

ABSTRACT

A resin sealing type semiconductor device, a manufacturing method thereof and a packaging structure thereof are capable of downsizing the semiconductor device and attaining high-density packaging. For this, the resin sealing type semiconductor device with leads exposed in an outer surface, is provided with spot leads adhered to a circuit forming surface of a semiconductor element with an insulating adhesive tape interposed therebetween, each independently regularly arrayed, and exposed to outside with the semiconductor element disposed inside.

BACKGROUND OF THE INVENTION

The present invention relates to a resin sealing type semiconductordevice, a manufacturing method thereof and a packaging structurethereof.

In recent years, with rapid advancements of IC cards and memory cards aswell, a resin sealing type semiconductor device mounted in the card hasbeen required to be made thinner. In response to this demand, a goodnumber of methods of thinning the semiconductor device have beenproposed.

One of those proposals is concerned with a structure in which the uppersurface of a chip support and an undersurface of a semiconductor elementare exposed as disclosed in, e.g., Japanese Patent ApplicationNo.6-273262. According to this structure, a whole thickness of a packagecan be set on the order of 0.5 mm.

Further, as disclosed in Japanese Patent Laid-Open PublicationNo.5-309983 (Japanese Patent Application No.4-119133), a technique forreducing a packaging area is attained by bending a lead in an L-shape.

In the prior art resin sealing type semiconductor device describedabove, however, even when the package becomes thinner, the packagingarea remains unchanged. That is, the lead extends along the outside of amold resin, and hence an area of packaging on a printed circuit board isconsiderably wide as compared with the semiconductor element. Thisconfiguration is insufficient for actualizing high-density packaging.

The present invention aims at downsizing the resin sealing typesemiconductor device and attaining the high-density packaging as well asat obviating the problems described above.

SUMMARY OF THE INVENTION

The present invention is:

(1) An upper layer of a surface formed with a semiconductor circuit isprovided with an insulating layer composed of an insulating adhesivetape. A plurality of spot leads each electrically independent andregularly disposed are provided on the upper layer of the insulatinglayer. Further, a mold resinous portion is provided on side surface ofat least the insulating layer and the semiconductor element, therebyobtaining a resin mold package structure. Based on such a structure, itis feasible to downsize a resin sealing type semiconductor device and toattain high-density packaging thereof.

(2) Moreover, in the structure of the item (1), a metal bump is formedin a portion provided with no insulating layer, i.e., with no insulatingtape, whereby an electrical connection between the semiconductor elementand the spot lead is actualized. Thus, the connection to thesemiconductor element involves the use of not only the metal bump butalso the insulating adhesive tape, thereby relieving stress upon themetal bump due to a difference in terms of thermal expansion. Then, itis possible to prevent an occurrence of deterioration and a decline inelectric characteristic due to a fracture, etc. of the metal bump.

(3). In the structure of the item (1), an outside exposed surface of thespot lead is coated with metal plating. This metal plating may be coatedon a surface opposite to the outside exposed surface, viz., on thesurface on the side of the semiconductor element but should not beapplied onto the side surface of the spot lead. More specifically, nometal plating is applied to a contact portion, with the mold resinousportion, provided on the side surface, thereby making it feasible toprevent a crack in the resin after molding.

(4). According to the structure of the item (1), a support portioncomposed of the same member as the spot lead but independent of the spotlead is provided on the upper layer of the insulating layer. The supportportion may be provided so as to extend through a central portion of thesemiconductor device surface on which the spot leads are arranged. Thesupport portion is provided in this manner, and the structure of thesemiconductor device can be strengthened, whereby a solid and highlyreliable semiconductor device can be obtained.

(5). In the structure of the item (4), the spot lead and the supportportion are provided in a state where these two components are so formedas to have continuity from each other through a lead frame, and areindependently separated from each other by cutting the lead frame. Thus,the spot lead and the support portion can be formed simultaneously byuse of the lead frame, and therefore a semiconductor device strengthenedstructurewise is obtained with a less number of steps.

(6). According to the structure of the item (2), the spot lead isprovided with an extension lead and is electrically connected to thesemiconductor element through the metal bump at a midway portion or afront edge of this extension lead. Thus, the spot lead serving as anexternal terminal is provided with the extension lead extending up to ajunction area on the semiconductor element as a wire extends, and themetal bump is connected to this extension lead. Hence, the externalterminals (spot leads) can be formed in an array without depending muchon positions of the junction areas for forming the circuit on thesemiconductor element.

(7). According to a method of-manufacturing a resin sealing typesemiconductor device, to begin with, (a) a support portion in a leadframe is fixedly adhered to a plurality of spot leads leastwise at onesurface thereof by use of an insulating adhesive tape, and (b) theplurality of spot leads are separated from the lead frame. Thus, sincethe support portion and the spot leads are simultaneously formed, amanufacturing efficiency can be enhanced.

(8). According to a method of manufacturing a resin sealing typesemiconductor device, (a) a support portion in a lead frame is fixedlyadhered to a plurality of spot leads after metal plating at one surfacethereof by use of an insulating adhesive tape, (b) the plurality of spotleads are separated from the lead frame, and (c) a semiconductor elementis adhered to the other surface of the adhesive tape, and thesemiconductor element is resin-sealed with a mold resin. In this way,the spot lead after the metal plating is fixedly adhered by use of theinsulating adhesive tape and thereafter punched out (cut out).Therefore, the spot lead is fixed in a target position and in apredetermined size as well. Further, the metal plating is previouslyperformed and therefore becomes unnecessary afterward even in the stepof assembling the semiconductor device.

Moreover, the semiconductor element is stably supported by the adhesivetape, and further the solid resin sealing type semiconductor device canbe obtained with the support portion.

(9). An insulating layer composed of an insulating adhesive tape isprovided on an upper layer of a surface formed with the semiconductorcircuit. Provided are a plurality of spot leads respectivelyelectrically independent and regularly disposed on an upper layer of theinsulating layer, and the structure is that front edges of the spotleads extend downward in an L-shape from outside the side portion of thesemiconductor element. Also, a mold resinous portion formed on sidesurfaces of at least the insulating layer and the semiconductor element,thus providing a resin mold package structure. In this way, the L-shapedleads are exposed outside along the side surf aces of the semiconductorelement, and it is therefore possible to enhance a junction strength ofsolder for connecting the external terminal to a foot pattern of theprinted circuit board.

(10). According to a method of manufacturing a semiconductor device, (a)one surface of a plurality of spot leads in a lead frame are fixedlyadhered by use of an insulating adhesive tape, (b) the semiconductorelement is adhered to the other surface of the adhesive tape and issealed with a resin, and (c) the plurality of spot leads are separatedfrom the lead frame, and front edges of the spot leads are bent downwardin an L-shape from outside the side portion of the semiconductorelement. In this manner, the formation of the spot lead is not that moldresin sealing is performed after work-forming the lead frame but thatthe lead frame is work-formed after the mold resin sealing step in theassembly of the semiconductor device. It is therefore feasible tomanufacture the resin sealing type semiconductor device capable ofhigh-density packaging.

(11). According to a method of packaging a semiconductor device, (a)there are disposed, in a side-by-side relationship, a plurality ofsemiconductor devices including a plurality of L-shaped leads exposed tooutside from upper surfaces of semiconductor elements within moldresinous portions, with their front edges extending downward fromoutside the side portions of the semiconductor elements, and theL-shaped leads are connected to each other. Then, (b) connectingportions of the L-shaped leads are connected to the same foot patternprovided on a wiring board. Accordingly, the two L-shaped leads can beconnected together to the foot pattern on the same printed wiring board.

(12). According to a structure of an aggregate type semiconductordevice, there are prepared a plurality of semiconductor devicesincluding a plurality of L-shaped leads exposed to outside from uppersurfaces of semiconductor elements within mold resinous portions, frontedges of which extend downward from outside the side portions of thesemiconductor elements. Then, the semiconductor devices are disposed ina face-to-face relationship so that front edges of the L-shaped leadsface each other, and the front edges of the L-shaped leads are connectedto each other. That is, the upper resin sealing type semiconductordevice is reversely laminated on the lower resin sealing typesemiconductor device packaged on the board, and the front edges of theL-shaped leads of the respective resin sealing type semiconductordevices are connected. Thus, the upper resin sealing type semiconductordevice is reversely laminated on the lower resin sealing typesemiconductor device packaged on the board, and the front edges of theL-shaped leads of the individual resin sealing type semiconductordevices are connected. It is therefore possible to attain high-densitypackaging on the board.

(13). In the aggregate type semiconductor device in the item (12), resinpackages are each composed of a mold resin in the plurality ofsemiconductor devices, and undersurfaces of the resin packages are fixedto each other with an adhesive agent. Thus, the undersurfaces of theupper and lower resin sealing type semiconductor devices are fixed toeach other by use of the adhesive agent, and consequently the solidcompact aggregate semiconductor device can be obtained.

(14). According to a structure of the aggregate type semiconductordevice, there are prepared a plurality of semiconductor devicesincluding a plurality of L-shaped leads exposed to outside from uppersurfaces of semiconductor elements within mold resinous portions, frontedges of which extend downward from outside the side portions of thesemiconductor elements. Then, the plurality of semiconductor devices arelaminated so that front edges of the L-shaped leads are set mutually inthe same direction. That is, the upper semiconductor device is furtherlaminated in the same direction on the lower semiconductor device. Withfurther laminations in the same direction, the aggregate typesemiconductor device having more multi-layers is to be obtained. Forexample, the semiconductor devices are superposed in three layers bylaminating one more resin sealing type semiconductor device, and theL-shaped leads thereof are connected, thereby making it feasible toacquire much-higher-density packaging upon the board.

(15). According to the structure of the item (14), in the plurality oflaminated semiconductor devices, the front edge of the L-shaped lead ofthe upper semiconductor device is connected to a bent portion of theL-shaped lead of the lower semiconductor device. In this way, the uppersemiconductor device is laminated in the same direction on the lowersemiconductor device packaged on the board, and the front edge and thebent portion of the L-shaped leads of the respective semiconductordevices, are connected to each other. Hence, the still-higher-densitypackaging on the board is attainable simply by laminating the resinsealing type semiconductor devices sequentially in the same direction.

(16). According to the structure of the item (14), resin packages areeach composed of a mold resin in the plurality of semiconductor devices,and an undersurface of the resin package of the upper semiconductordevice is fixed to an upper surface of the resin package of the lowersemiconductor device by use of an adhesive agent. Thus, the upper andlower semiconductor devices are fixed to each other by using theadhesive agent, and the solid compact semiconductor device can bethereby obtained.

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects and advantages of the present invention will becomeapparent during the following discussion in conjunction with theaccompanying drawings, in which:

FIG. 1 is a sectional view of a resin sealing type semiconductor device,showing a first embodiment of the present invention;

FIG. 2 is a partial perspective view of the resin sealing typesemiconductor device, showing the first embodiment of the presentinvention;

FIG. 3 is a sectional view of the resin sealing type semiconductordevice, showing a modified embodiment of the first embodiment of thepresent invention;

FIG. 4 is a partial perspective view of the resin sealing typesemiconductor device, showing a modified embodiment of the firstembodiment of the present invention;

FIG. 5 is an explanatory diagram illustrating a problem inherent in theresin sealing type semiconductor device;

FIG. 6 is a plan view showing a step of manufacturing a lead frame inthe first embodiment of the present invention;

FIG. 7 is a perspective view of the principal portion of the resinsealing type semiconductor device, showing a second modified embodimentof the first embodiment of the present invention;

FIG. 8 is a sectional view of the resin sealing type semiconductordevice, showing a second embodiment of the present invention;

FIG. 9 is a sectional view of the resin sealing type semiconductordevice, showing a modified embodiment of the second embodiment of thepresent invention;

FIG. 10 is a partial perspective view of the resin sealing typesemiconductor device, showing a modified embodiment of the secondembodiment of the present invention;

FIG. 11 is a sectional view showing a first applied embodiment of thesecond embodiment of the present invention;

FIG. 12 is a sectional view showing a second applied embodiment of thesecond embodiment of the present invention;

FIG. 13 is a sectional view showing a third applied embodiment of thesecond embodiment of the present invention; and

FIG. 14 is a sectional view showing a fourth applied embodiment of thepresent invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will hereinafter be discussed indetail with reference to the accompanying drawings.

FIG. 1 is a sectional view of a resin sealing type semiconductor device,showing a first embodiment of the present invention. FIG. 2 is a partialperspective view of the resin sealing type semiconductor device.

As illustrated in FIGS. 1 and 2, a spot lead 7 is adhered, together witha semiconductor element support 4, to one surface of an insulatingadhesive tape (which is simply termed an “adhesive tape”) 2. Further, asemiconductor element 1 is adhered, with its circuit forming surface setin a face-to-face relationship with the spot lead, to the other surfaceof the adhesive tape 2.

An electrical connection of the semiconductor element 1 to the spot lead7 is actualized by a metal bump 9 provided in an area with nointermediary of the adhesive tape 2. This metal bump 9 is composed of aconductive metal such as a solder alloy, etc. and is provided on anunillustrated electrode surface formed on the side of the semiconductorelement 1.

The spot lead 7 is coated with metal plating 8 for an external terminal(an upper surface side in the Figure) and for an internal connection (alower surface side in the Figure). Note that the metal plating may notbe coated on the side surfaces of the spot lead.

At least side external and lower portions of the spot lead 7, thesupport 4 and the semiconductor element 1 are sealed by mold resins 6.

Incidentally, the above-described spot leads 7 in the present embodimentare regularly arranged inwardly of the area of the semiconductor element1, i.e., within a width of the semiconductor element 1.

Further, a height of the metal bump 9 is substantially the same as athickness of the adhesive tape 2.

Accordingly, it follows that a thickness of the semiconductor device isa sum of the thickness of the semiconductor element 1, the height of themetal bump 9 and a thickness of the spot lead 7. Moreover, in accordancewith present embodiment, the spot lead constituting the externalterminal is substantially flush with the surface of the semiconductordevice.

More specifically, the semiconductor device is as thin as 0.4-0.5 mm,wherein the spot lead 7 is approximately 0.125 mm thick, the metal bump9 is 0.5 mm in height, and the semiconductor element 1 is 0.250 mm inthickness. Besides, the semiconductor element 1 is capable ofaccommodating the respective constructive members. Also, the connectionbetween the spot lead 7 and the semiconductor element 1 involves the useof the metal bump 9 and the adhesive tape 2 as well, and hence a stressupon the metal bump 9 due to a difference in terms of thermal expansiontherebetween is relieved, with the result that it is feasible to preventan occurrence of deterioration and a decline in electric characteristicdue to a fracture, etc. of the metal bump 9.

Furthermore, the structure depicted in FIGS. 1 and 2 is that the support4 extends through the central portion of the semiconductor device into-and-fro directions in FIG. 2, and therefore a solid package structurecan be actualized.

Incidentally, the semiconductor element support is effective inincreasing a rigidity of the semiconductor device but may not benecessarily indispensable. As shown in FIGS. 3 and 4, a resin sealingtype semiconductor device with the support 4 removed is also, as amatter of course, available.

Further, as illustrated in FIG. 5, the spot lead 7 and the mold resin 6are different in terms of coefficient of thermal expansion, andconsequently, when reverting to the normal temperature after beingsealed by the mold resin 6, a gap 101 is formed in between respectiveboundaries. Furthermore, it can be considered that this might bedeveloped into a crack 102. Then, an enhancement of close-contactproperty at those boundaries may, as shown in FIGS. 1 and 3, entail suchan arrangement that the side surfaces of the spot lead 7 are not coatedwith the metal plating 8 for the external terminal and for the internalconnection. It is because the metal plating 8 causes a decline in theclose contact with the mold resin 6. Then, the contact surface betweenthe mold resin 6 and the metal plating 8 is eliminated.

With this configuration, since the contact between the mold resin 6 andthe metal plating 8 disappears, the crack, etc. of the mold resin aftermolding can be prevented.

FIGS. 6(a) and 6(b) are plan views showing a step of manufacturing alead frame in the first embodiment of the present invention. FIG. 6(a)is a plan view showing the lead frame before being cut. FIG. 6b is aplan view showing the lead frame after being cut.

To start with, as illustrated in FIG. 6(a), there is prepared a leadframe 10 including a frame member 10 a, a partition member 10 b, thesupport 4 for connecting the frame member 10 a, and a plurality of leads7A extending inward from the partition member 10 b. Front edges of theplurality of leads 7A are coated with the metal plating 8 and thereafterso thermally press-fitted as to be adhered to the adhesive tape 2.

Punched out thereafter, as illustrated in FIG. 6(b), are non-contactportions between the leads 7A and the adhesive tape 2, i.e., theportions in between the partition member 10 b and the front edges of theleads 7A, thus finally forming the spot leads 7. That is, there iseffected the punch-out in such a size that the spot leads 7 becomeexternal terminals. The thus punched-out spot leads 7 are secured to theadhesive tape 2, and the processing directly enters an assembly of thesemiconductor device.

As discussed above, in accordance with the first embodiment, afterfinishing the metal plating 8, the plurality of leads 7A are secured bythe adhesive tape 2, and next, for punching out the above portions intothe spot leads 7, the spot leads 7 are fixed in target positions and ina predetermined size. Further, the metal plating is previously carriedout, and therefore the metal plating becomes unnecessary afterward evenin the step of assembling the semiconductor device.

Next, a second modified embodiment of the first embodiment of thepresent invention will be explained.

FIG. 7 is a perspective view of the principal portion of the resinsealing type semiconductor device, showing the second modifiedembodiment of the first embodiment of the present invention.

Referring to FIG. 7, there are shown the mold resin 6, the spot lead 7,an extension lead 7-1, the metal plating 8 coated on the spot lead 7 andthe surface of the extension lead 7-1, and the metal bump 9.

The spot leads 7 in the first embodiment are arrayed and, correspondingthereto, soldered to foot patterns (not shown) of a printed circuitboard (unillustrated). Junction areas of the semiconductor element 1exist in the same positions as those of the spot leads 7, and thisimplies that the semiconductor element has no degree of freedom andmight be constrained in terms of forming the circuit. Then, even if thejunction areas on the semiconductor element are disposed with dispersionto some extent, the external terminals of the spot leads can be arrayedwith the aid of the extension leads 7-1 in accordance with thisembodiment.

That is, the spot leads 7 serving as the external terminals are providedwith the extension leads 7-1 extending to the junction areas on thesemiconductor element as wires extend, the metal bumps 9 are connectedto the front edges of the extension leads 7-1.

Accordingly, the external terminals can be formed in an array withoutdepending much upon the positions of the junction areas for forming thecircuit on the semiconductor element.

Next, a second embodiment of the present invention will be described.

FIG. 8 is a sectional view of a resin sealing type semiconductor device,showing the second embodiment of the present invention.

As illustrated in FIG. 8, though the structure is substantially the sameas the first embodiment, the above-mentioned spot lead is exposed to theside surface of the semiconductor element 1, and an L-shaped lead 12 isbent in an L-shape.

Accordingly, the formation of the spot lead is, unlike the firstembodiment, not that mold resin sealing is performed after work-formingthe lead frame but that the lead is work-formed after the mold resinsealing step in the assembly of the semiconductor device.

Thus, the L-shaped lead 12 is exposed up to the side surface of thesemiconductor element 1, and therefore a junction strength of the solderfor connecting the external terminals to the foot patterns (not shown)of the printed circuit board (unillustrated), can be enhanced.

Incidentally, as shown in FIG. 9, the resin sealing type semiconductordevice may, as a matter of course, be constructed with an omission ofthe support 4 illustrated in FIG. 8.

FIG. 10 is a perspective view showing the principal portion of the resinsealing type semiconductor device constructed such that thesemiconductor element support shown in FIG. 9 is eliminated, wherein theL-shaped leads coated with the metal plating 8 are arranged on bothsides of the mold resin 6 by which the semiconductor element is sealed.

FIG. 11 is a sectional view showing a first applied embodiment of thesecond embodiment of the present invention.

According to the resin sealing type semiconductor device sealed by themold resin 6 shown in the second embodiment, because of the L-shapedleads 12 existing on the side surfaces, there can be connected L-shapedleads 12 b of a resin sealing type semiconductor device B and L-shapedleads 12 a of a resin sealing type semiconductor device A, which leadsare adjacent to each other.

Further, the L-shaped lead 12 a and the L-shaped lead 12 b can beconnected through a solder 14 together to a foot pattern 15 on the sameprinted circuit board 13. That is, the L-shaped lead 12 a and theL-shaped lead 12 b can be shared on the same foot pattern 15. The methodof those connections is seen in many cases in the semiconductor devicefunctioning as a memory, wherein the circuits of the semiconductorelements adjacent to each other are formed reversely, and the I/Os ofthe terminals are also reversed.

Thus, the L-shaped leads 12 are provided on the side surfaces of theresin sealing type semiconductor device, and it is therefore possible tocompactly package the resin sealing type semiconductor devices in serieson the same printed circuit board 13.

Furthermore, the wiring on the printed circuit board can be simplified.

FIG. 12 is a sectional view showing a second applied embodiment of thesecond embodiment of the present invention.

According to the resin sealing type semiconductor device sealed by themold resin 6 shown in the second embodiment of the present invention,the L-shaped leads 12 extend along the side surface up to the oppositesurface, and hence, as illustrated in FIG. 12, if the resin sealing typesemiconductor devices are reversed (the undersurfaces thereof aredirected facing toward each other) and laminated in two layers, thefront edge of the L-shaped lead 12 a of the resin sealing typesemiconductor device A is fixed via the solder 14 to the front edge ofthe L-shaped lead 12 b of the resin sealing type semiconductor device B.Also, the front edge of the L-shaped lead 12 b of the resin sealing typesemiconductor device A is connected via the solder 14 to the front edgeof the L-shaped lead 12 a of the resin sealing type semiconductor deviceB. Moreover, the undersurfaces of the semiconductor devices (resinpackages) are fixed to each other with an adhesive agent 16.

Thus, the L-shaped leads extend outwardly along the side surfaces of theresin package up to the undersurface, so that the front edges of therespective L-shaped leads 12 of the resin sealing type semiconductordevice A and the resin sealing type semiconductor device B reversedthereto, can be connected by the solders. Besides, the undersurfaces ofthe semiconductor elements are fixed to each other with the adhesiveagent 16, and consequently a density of packaging on the printed circuitboard 13 can be enhanced.

Note that the resin sealing type semiconductor devices used herein arereversed in terms of formation of the circuits of the respectivesemiconductor elements 1 and in the I/Os of the terminals as well.

FIG. 13 is a sectional view illustrating a third applied embodiment ofthe second embodiment of the present invention.

According to the third applied embodiment, as shown in FIG. 13, one morelayer is laminated on the above two layers shown in FIG. 12 to formthree layers. More specifically, a resin sealing type semiconductordevice C serving as a third layer is laminated, in the same direction asthat of the first layer, on the resin sealing type semiconductor deviceB as the second layer, wherein the respective L-shaped leads 12 areconnected.

In this way, the resin sealing type semiconductor devices in accordancewith the second embodiment of the present invention, are laminated inthe three layers, and the density of packaging on the printed circuitboard 13 can be therefore much more enhanced.

Further, the number of layers can be increased such as four layers, fivelayers and so on.

FIG. 14 is a sectional view illustrating a fourth applied embodiment ofthe second embodiment of the present invention.

The resin sealing type semiconductor devices sealed by the mold resins 6shown in the second embodiment of the present invention, because of theL-shaped leads 12 extending outwardly along the side surfaces of theresin package up to the portions in the vicinity of the undersurface,can be therefore, as illustrated in FIG. 14, laminated upwards in thesame direction. To be more specific, the resin sealing typesemiconductor device A is packaged on the printed circuit board 13, andthe resin sealing type semiconductor device B is laminated thereon inthe same direction. Then, the L-shaped lead 12 a of the resin sealingtype semiconductor device A can be connected, via the solder 14 at thefront edge and the L-bent portion of the L-shaped leads 12, to theL-shaped lead 12 a of the resin sealing type semiconductor device B. TheL-shaped lead 12 b of the resin sealing type semiconductor device A canbe connected likewise to the L-shaped lead 12 b f the resin sealing typesemiconductor device B. Further, the resin sealing type semiconductordevices A and B are fixed to each other with the adhesive agent 16.

Accordingly, the density of packaging on the printed circuit board 13can be increased. The method of those connections is seen in the greatmajority of cases in the memory semiconductor devices that can belaminated in multi-layers with absolutely the same circuit formationelements.

Note that the present invention is not limited to the embodimentdiscussed above but may be modified in a variety of ways based on thegist of the present invention, and those modifications are not excludedout of the scope of the present invention.

What is claimed is:
 1. A semiconductor device, comprising: a substratehaving a semiconductor circuit surface with a semiconductor circuitformed thereon, the semiconductor circuit surface including a firstsurface portion composed of a central portion of the semiconductorcircuit surface, and a second surface portion that surrounds the firstsurface portion; a single undivided insulating layer, including aninsulating adhesive tape, on the first surface portion, the secondsurface portion being free of the insulating layer; a plurality of leadsdisposed both directly on the insulating layer and over the secondsurface portion, the leads being electrically independent of each other;a plurality of metal bumps, each of the leads corresponding to arespective one of the metal bumps, each of the metal bumps beingdisposed between the corresponding lead and the second surface portion;and a resin mold covering the insulating layer and the substrate,wherein surfaces of the leads are free of the mold resin and exposed forexternal connection.
 2. The semiconductor device of claim 1, wherein theleads have metal plating at the exposed surfaces.
 3. The semiconductordevice of claim 1, further comprising a support member on the insulatinglayer, supporting the resin mold.
 4. The semiconductor device of claim3, wherein the support member subdivides the resin mold.
 5. Thesemiconductor device of claim 3, wherein the support member and theleads are formed of the same material.
 6. The semiconductor device ofclaim 5, wherein the support member and the leads are separated by theresin mold.
 7. The semiconductor device of claim 1, wherein the leadsare electrically connected to the semiconductor circuit surface throughthe metal bumps.
 8. The semiconductor device of claim 1, furthercomprising extensions connected to the leads.
 9. The semiconductordevice of claim 8, wherein the leads are electrically connected to thesemiconductor circuit surface through connections between the metalbumps and the extensions.
 10. A semiconductor device of claim 1, whereinthe substrate has a back surface opposite the semiconductor circuitsurface and a side surface between the back surface and thesemiconductor circuit surface, and wherein the resin mold is formed overonly the semiconductor circuit surface and side surface so that the backsurface is free of the resin mold.
 11. An aggregate-type semiconductordevice, comprising a plurality of individual semiconductor devices, eachsemiconductor device having a first surface, a second surface oppositeto the first surface, and a side surface extending between the first andsecond surfaces, each of said individual semiconductor devicesincluding: a resin mold at the first surface, and a plurality of leads,each lead being connected to the first surface, each lead having outersurfaces that are free of the resin mold and are exposed for externalconnection, each lead extending from the first surface to the sidesurface and extending along the side surface toward the second surface,each lead having a front edge terminating on the side surface, whereineach lead of each one of the individual semiconductor devices isconnected to a corresponding lead of another one of the individualsemiconductor devices.
 12. The aggregate-type semiconductor device ofclaim 11, wherein each one of the leads is connected to thecorresponding lead with solder.
 13. The aggregate-type semiconductordevice of claim 11, wherein the plurality of individual semiconductordevices are disposed in a face-to-face relationship so that the frontedges of the leads of each individual semiconductor device face thecorresponding leads to which they are connected.
 14. The aggregate-typesemiconductor device of claim 13, wherein the second surface of one ofthe individual semiconductor devices is connected to the second surfaceof another of the individual semiconductor devices with an adhesiveagent.
 15. The aggregate-type semiconductor device of claim 11, whereinthe plurality of semiconductor devices are disposed so that the frontedges of the leads are faced in the same direction.
 16. Theaggregate-type semiconductor device of claim 15, wherein the secondsurface of one of the individual semiconductor devices is connected tothe first surface of another of the individual semiconductor deviceswith an adhesive agent.
 17. A semiconductor device comprising: asubstrate having a semiconductor circuit surface with a semiconductorcircuit formed thereon; an insulating layer, including an insulatingadhesive tape, on the semiconductor circuit forming surface; a pluralityof leads disposed on the insulating layer at regular intervals and beingelectrically independent of each other, each lead having an innersurface that faces the semiconductor circuit surface, an outer surfaceopposite to the inner surface, and a side surface extending between theouter and inner surfaces, wherein at least the outer surface is coatedwith conductive metal plating and the side surface is free of metalplating; a plurality of metal bumps, each of the leads corresponding toa respective one of the metal bumps, each of the bumps being disposedbetween the inner surface of the corresponding lead and thesemiconductor circuit surface; and a resin mold covering the sidesurfaces of the leads and surfaces of the insulating layer and thesubstrate, wherein the outer surfaces of the leads are free of the resinmold.
 18. A semiconductor device of claim 17, wherein the inner surfacesexcept for the bonded portions and the outer surfaces of the leads arecoated with the metal plating.
 19. A semiconductor device of claim 17,wherein the substrate has a back surface opposite the semiconductorcircuit surface and a side surface between the back surface and thesemiconductor circuit surface, and wherein the resin mold is formed overonly the semiconductor circuit surface and side surface so that the backsurface is free of the resin mold.
 20. The aggregate-type semiconductordevice of claim 11, wherein the resin mold is formed over only the firstsurface and side surface so that the second surface is free of the resinmold.